Silicon Carbide Nanopowder (SiC, Beta)
Silicon Carbide (SiC) Nanopowder Purity: 99+%
Silicon Carbide (SiC) Nanopowder APS: <80nm
Silicon Carbide (SiC) Nanopowder Color: Dark Green
Silicon Carbide (SiC) Nanopowder Bulk Density: 0.05 g/cm3
Silicon Carbide (SiC) Nanopowder True Density: 3.216 g/cm3
Silicon Carbide (SiC) Nanopowder Morphology: cubic
Silicon Carbide (SiC) Nanopowder Making Method: Plasma CVD
Silicon Carbide (SiC) Nanopowder SSA: 25-50 m2/g
Silicon Carbide (SiC) Nanopowder Zeta Potential: -27.8mV
Silicon Carbide (SiC) Nanopowder General Features:
1. The product possesses high purity, narrow range particle size distribution, and larger specific surface area; 2.This product has chemical stability, high thermal conductivity, smaller thermal expansion coefficient and better abrasion resistance; 3. Its microhardness is 2840 ~ 3320kg/mm2 and hardness is between corundum and diamond; Its mechanical strength is higher than the corundum; 4. nano-SiC possesses excellent thermal conductivity. It is a semiconductor and resistant to oxidation in high temperature.
Silicon Carbide (SiC) Nanopowder Applications:
High-grade refractory material; Special use material for polishing abrasive; Ceramic bearings; Ceramic engine parts; Grinding wheels; Textile ceramics; High-frequency ceramics; Hard disc and a support for multichip modules; High-temperature and high-power semiconductors; High-temperature ceramic bearings; High-temperature fluid transport parts; High hardness grinding materials; High-temperature sealing valves; High-temperature spray nozzles; Integrated circuit substrate; Catalyst support; Mirror or coatings for extreme ultraviolet environment; Nanocomposites (e.g., Si3N4/SiC, SiC/polymer); Resistance heating elements; Strengthening materials for Al, Al2O3, Mg, and Ni......
Silicon Carbide (SiC) Nanopowder Storage Conditions:
Damp reunion will affect its dispersion performance and using effects, therefore, this product should be sealed in vacuum and stored in cool and dry room and it should not be exposure to air. In addition, the product should be avoided under stress.
